The IR/IR are high voltage, high speed power. MOSFET and Please refer to our Application Notes and DesignTips for proper circuit board layout. APPLICATION NOTE. 1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICES. The gate drive requirements for a power MOSFET or IGBT uti- lized as a high. Design and Application Guide of Bootstrap Circuit for. High-Voltage Gate-Drive IC. Rev. • 12/18/14 1. Introduction. The purpose of.
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Is there a disadvantage to using a larger cap? Jul 1, Quote of the day.
Thank you noge much. The application note is clear on ceramic vs. If you follow the one shown above you WILL need a load, but if you follow the one shown below, you don’t need a load to charge the caps.
No license, whether express or implied, is granted by Infineon. It’s a long drive home. The value for 20kHz is 0. Infineon reserves the right to make corrections, deletions, modifications, enhancements, improvements and other changes to the alplication and materials, its products, programs and services at any time or to move or discontinue any content, products, programs, or services without notice.
Jul 2, I R 2 3 04 switch frequency: Yes, my password is: If it does then it is not due to cross conduction.
Pspice Simulation with IR
You may need a more capable gate driver IC. If so, is there a rule of thumb saying how big? One question though – suppose I require a capacitor of 1uF. Jul 3, I just redid my calculation and the answer turns out to be the same. Then see if the other still gets hot. Turn-off delay time is 42nS.
If it does then cross conduction is highly likely.
Content on this site may contain or be subject to specific guidelines or limitations on use. Jun 18, 8.
mosfet – Bootstrap Capacitor Selection with IR/3 – Electrical Engineering Stack Exchange
Unfortunately, by looking at the suggested schematic see below I’m unable to understand what value should I be using for this. You should add your circuitry and the error report of your simulation about overflow and convert error to your post.
Use of the information on this site may require a license from a third party, or a license from Infineon. From the application notethe expression to find the bootstrap capacitor is as follows. Is there a disadvantage to using a larger cap? Hope I could help. Appkication makes no warranties or representations with regard to this content and these materials of any kind, whether express or implied, including without limitation, warranties or representations of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right.
One question though – suppose I require a capacitor of 1uF.
For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency of 50Hz. Should I use a 1uF cap. Total gate charge for the IRF is 38nC. Post as a guest Name. The application note is clear on ceramic vs. I cbs applcation leakBootstrap cap.
High voltage half Bridge mosfet problem.
Could you tell me how much power you are using as your load? I cbs – leakBootstrap cap. I have a boot strap circuit and have also charged the capacitor by giving pulse to low side switch first.
If so, is there a rule of thumb saying how big? Fundamentals Of Alplication Computing This article walks through the very basics of quantum computing and how they are designed. For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency of 50Hz. Half nofe induction heater mosfet problem Posted by ajrenzetti in forum: I greatly appreciate any help.
Jun 18, 6. I really don’t have time to go through all of this, but it sounds like you’re running into a cross-conduction problem due to insufficient “dead time”; and you’re running at some fairly high frequencies.
Jun 18, 7. Should I use a 1uF cap.